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AOB4184 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the 2 D PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identical. -RoHS Compliant -AOB4184L is Halogen Free
TO-263 D2PAK
Features
VDS (V) =40V ID = 30 A (V GS = 10V) RDS(ON) < 10.5 m (VGS = 10V) RDS(ON) < 13 m (V GS = 4.5V) 100% UIS Tested!
Top View D
D
S S G G Bottom View G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain A Current Avalanche Current
C C
Maximum 40 20 30 24 120 12 10 35 61 50 25 2.5 1.6 -55 to 175
Units V V
TC=25C TC=100C TC=25C TC=70C IDSM IAR EAR PD PDSM TJ, TSTG ID IDM
A
A mJ W W C
Repetitive avalanche energy L=100uH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient B Maximum Junction-to-Case
Symbol
A A
t 10s Steady-State Steady-State
RJA RJC
Typ 11 42 2.4
Max 17 50 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=40V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current 1250 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 165 95 2 22 VGS=10V, VDS=20V, ID=20A 11 3.5 4.5 VGS=10V, VDS=20V, RL=1, RGEN=3 IF=20A, dI/dt=500A/s 15 48 TJ=125C 1.7 120 8.5 13.2 10 100 0.72 1 30 1500 215 135 3.5 27.2 13.6 4.5 6.4 6.4 17.2 29.6 16.8 19 59 25 78 1800 280 190 5 35 18 6 9 10.5 17 13 2.1 Min 40 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0 : July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 10V 100 80 4V ID (A) 60 40 20 3V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 14 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V, 20A 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics ID(A) 60 4.5V 80 100 VDS= 5V
40 Vgs=3.5V 20 25C 125C
12 RDS(ON) (m) VGS=4.5V 10 VGS=10V 8
VGS=10V, 30A
6 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 5 10
20 ID=20A 15 RDS(ON) (m) 125C
1.0E+02 1.0E+01 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 125C 25C
10 25C 5
1.0E-04 1.0E-05
0 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=12.5V ID=20A Capacitance (pF) 2500
8
2000 Ciss 1500
VGS (Volts)
6
4
1000 Coss 500 Crss 0 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 10 40
2
0 0 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 30
0
1000 TJ(Max)=175C, Tc=25C 100 ID (Amps) 100s 10 RDS(ON) limited D 1ms Power (W) 10
200 160 120 80 40 0 0.0001
0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175C Tc=25C
1
0.1
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current 90 80 70 60 50 40 30 20 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 50 40 Power (W) 30 20 10 0 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 TCASE (C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TA=25C 125C 150C 100C TA=25C Power Dissipation (W) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F)
40
Current rating ID(A)
30
20
10
0
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) T
0.01
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
E AR= 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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